2SA1862 transistors high-voltage switching transistor ( ? 400v, ? 2a) 2SA1862 ! ! ! ! features 1) high breakdown voltage. (bv ceo = ? 400v) 2) low saturation voltage. (typ. v ce (sat) = ? 0.3v at i c / i b = ? 500ma / ? 100ma) 3) high switching speed, typically tf = 0.4 s at i c = ? 1a. 4) wide soa (safe operating area). ! ! ! ! absolute maximum ratings (ta = 25 c) parameter symbol v cbo v ceo v ebo i c p c tj tstg limits ? 400 ? 400 ? 7 ? 2 1 10 150 ? 55~+150 unit v v v a (dc) ? 4 a (pulse) * w w (tc = 25 ?c) ?c ?c * single pulse, pw = 10ms collector-base voltage collector-emitter voltage emitter-base voltage collector current collector power dissipation junction temperature storage temperature ! ! ! ! external dimensions (units : mm) 2.3 0.5 1.0 0.5 9.5 2.5 0.8min. 1.5 6.5 2.3 ( 2 ) ( 3 ) c0.5 0.65 0.9 ( 1 ) 0.75 2.3 0.9 1.5 5.5 (3) emitter(source) (2) collector(drain) (1) base(gate) rohm : cpt3 eiaj : sc-63 5.1 ! ! ! ! packaging specifications and h fe type 2SA1862 cpt3 p tl 2500 package h fe code basic ordering unit (pieces) ! ! ! ! electrical characteristics (ta = 25 c) parameter symbol min. typ. max. unit conditions bv cbo bv ceo bv ebo i cbo i ebo v ce(sat) h fe f t cob ? 400 ? 400 ? 7 ? ? ? 82 ? ? ? ? ? ? ? ? 0.3 ? 18 30 ? ? ? ? 10 ? 10 ? 0.5 180 ? ? v v v a a v ? mhz pf i c = ? 50 a i c = ? 1ma i e = ? 50 a v cb = ? 400v v eb = ? 5v i c /i b = ? 0.5a / ? 0.1a v ce(sat) ??? 1.2 v i c /i b = ? 0.5a / ? 0.1a v ce = ? 5v, i c = ? 0.1a v cb = ? 10v, i e = 0.1a, f = 5mhz v ce = ? 10v, i e = 0a, f = 1mhz ton ? 0.2 ? si c = ? 1a, r l = 150 ? tstg ? 1.8 ? si b1 = ? i b2 = ? 0.2a tf ? 0.4 ? s v cc 150v collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current collector-emitter saturation voltage dc current transfer ratio transition frequency output capacitance base-emitter saturation voltage turn-on time storage time fall time
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